Hi Steve,
Nathan Sokal (WA1HQC) (SK) patented the Class E amplifier concept and, in addition to his IEEE and other professional papers, wrote quite extensively in the ham literature, especially QEX. In particular, his Jan. 2001 QEX paper, and follow ups over the next few months, is an excellent and very practical design overview. Interestingly in the present context of EER, his earlier QST letter of Jan. 1998 reports on some experiments with EER in which he was able to obtain < -40dBc IMD for an 80 m power amplifier.
The book to which you refer is an updated version following Sokal's death in 2016 at the age of 87. The current version is "Switchmode RF and Microwave Power Amplifiers" by Grebennikov and Franco, Academic Press, 2021. I borrowed a copy via an inter-library loan before eventually deciding to buy a paperback edition. After the engineering component of my career was spent worrying about microwave and millimetre-wave ultra-low-noise receivers, it's a contrast to be spending some of my declining years building LF/MF transmitters!
My own bench experiments were very informal and undocumented, filling a slow couple of days a few years ago when I had some ex-beacon PWM modulators in the shack, along with some hastily constructed Schottky envelope detectors. However, I do have details of the 175 W Class E PA and high speed input comparator if that's useful. The 300 W Class D power amplifiers are are similar to those designed by David, G0MRF, although I drive the transformer-coupled push-pull arrangement with my comparator, eliminating the need for a double-frequency drive signal (which is normally divided by 2 to obtain the accurate gate drive square wave).
Regarding the SiC FET's, David and I have a new prototyping board incorporating selectable input type (flip-flop or comparator), gate dead-time generator using digital delays, FET drivers and FET mountings. See David's picture at:
https://twitter.com/g0mrf/status/1482828715545579531 to get the general idea. It's not that we're planning to run the FET's hotter in operation; it's simply a way of increasing the ruggedness of the PA in response to extreme events (like the antenna falling down!). Our amplifiers are well-protected but experience has shown that you can't have too much device robustness. The cost of SiC devices is falling and they have a little advantage in terms of output capacitance if I recall correctly, so they begin to look reasonable for new designs. The devices I'm using are UnitedSiC UF3C065040K3S, by the way.
73, Peter.